1#Fichier de parametrisation de TAS, PROL10, LEVEL 2, HSPICE 2#Les parametres sont calcules en tenant compte des shrinks 3#Par DIOURY karim, le 15/06/1995 4 5Technologie : prol10 Version : 2.0 6 7#Reference Simulator 8ESIM = HSPICE 9MODEL = MOS 10LEVEL = 2.0 11 12#shrink parameters (micron) 13DLN = 0.0 14DLP = 0.0 15DWN = 0.0 16DWP = 0.0 17 18#transistor characteristics 19#NMOS 20VTN = 0.8 21BN = 0.7 22AN = 4.8e-05 23RNT = 11000.0 24 25#PMOS 26VTP = 1.2 27BP = 0.25 28AP = 1.7e-05 29RPT = 26000.0 30 31#general parameters 32VDDmax = 4.50 33VTHR = 2.250 34VSSdeg = 1.6 35VDDdeg = 3.5 36TEMP = 70.0 37 38#dynamic capacitance: grid capacitance (in pF/u and pF/u2) 39CGSN = 1500.0e-6 40CGSP = 1500.0e-6 41CGPN = 200.0e-6 42CGPP = 200.0e-6 43 44#dynamic capacitance: drain capacitance (in pF/u and pF/u2) 45CDSN = 400.0e-6 46CDSP = 600.0e-6 47CDPN = 500.0e-6 48CDPP = 800.0e-6 49CDWN = 200.0e-6 50CDWP = 200.0e-6 51 52#dynamic capacitance: source capacitance (in pF/u and pF/u2) 53CSSN = 400.0e-6 54CSSP = 600.0e-6 55CSPN = 500.0e-6 56CSPP = 800.0e-6 57CSWN = 200.0e-6 58CSWP = 200.0e-6 59