1#Fichier de parametrisation de TAS, PROL10, LEVEL 2, HSPICE
2#Les parametres sont calcules en tenant compte des shrinks
3#Par DIOURY karim, le 15/06/1995
4
5Technologie : prol10 Version : 2.0
6
7#Reference Simulator
8ESIM  = HSPICE
9MODEL = MOS
10LEVEL = 2.0
11
12#shrink parameters (micron)
13DLN = 0.0
14DLP = 0.0
15DWN = 0.0
16DWP = 0.0
17
18#transistor characteristics
19#NMOS
20VTN = 0.8
21BN  = 0.7
22AN  = 4.8e-05
23RNT = 11000.0
24
25#PMOS
26VTP = 1.2
27BP  = 0.25
28AP  = 1.7e-05
29RPT = 26000.0
30
31#general parameters
32VDDmax = 4.50
33VTHR   = 2.250
34VSSdeg = 1.6
35VDDdeg = 3.5
36TEMP   = 70.0
37
38#dynamic capacitance: grid capacitance (in pF/u and pF/u2)
39CGSN = 1500.0e-6
40CGSP = 1500.0e-6
41CGPN =  200.0e-6
42CGPP =  200.0e-6
43
44#dynamic capacitance: drain capacitance (in pF/u and pF/u2)
45CDSN = 400.0e-6
46CDSP = 600.0e-6
47CDPN = 500.0e-6
48CDPP = 800.0e-6
49CDWN = 200.0e-6
50CDWP = 200.0e-6
51
52#dynamic capacitance: source capacitance (in pF/u and pF/u2)
53CSSN = 400.0e-6
54CSSP = 600.0e-6
55CSPN = 500.0e-6
56CSPP = 800.0e-6
57CSWN = 200.0e-6
58CSWP = 200.0e-6
59